Tunable THz plasmon resonances in InGaAs/InP HEMT
نویسندگان
چکیده
Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 – 50 cm. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis.
منابع مشابه
Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor
The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gatevoltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and...
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